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AOD2HC60 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOD2HC60 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOD2HC60 600V,2.5A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 IDM 14A RDS(ON),max < 2 Ω Qg,typ 7.6nC Eoss @ 400V 1.6 µC 100% UIS Tested! 100% Rg Tested! Symbol VDS VGS IDM IAR EAR EAS MOSFET dv/dt ruggedness Peak diode recovery dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC V/ns 20 mJ A mJ 45 Parameter Typical W W/ oC Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 °C 14 Pulsed Drain Current C Continuous Drain Current B Maximum Junction-to-Ambient A,G TC=25°C 55 Maximum Thermal Characteristics Units °C/W ID TC=25°C 2.5 2 600 Junction and Storage Temperature Range -50 to 150 °C Power Dissipation B V ±30 Gate-Source Voltage TC=100°C A dv/dt 100 The AOD2HC60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Drain-Source Voltage Avalanche Current C 28 Repetitive avalanche energy C Derate above 25 oC 74 0.6 7.5 Single pulsed avalanche energy H 132 PD Maximum Case-to-sink A Maximum Junction-to-Case D,F °C/W °C/W 1.3 0.5 1.7 - G D S G S D G S D Top View TO252 DPAK Bottom View AOD2HC60 Rev.1.0 April 2013 www.aosmd.com Page 1 of 6 万和兴电子有限公司 www.whxpcb.com |
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