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CM50BU24H Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # CM50BU24H
Description  Four IGBTMOD U-Series Module 50 Amperes/1200 Volts
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

CM50BU24H Datasheet(HTML) 2 Page - Powerex Power Semiconductors

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CM50BU-24H
Four IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM50BU-24H
Units
Junction Temperature
Tj
-40 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
Collector Current (Tc = 25°C)
IC
50
Amperes
Peak Collector Current (Tj ≤ 150°C)
ICM
100*
Amperes
Emitter Current** (Tc = 25°C)
IE
50
Amperes
Peak Emitter Current**
IEM
100*
Amperes
Maximum Collector Dissipation (Tc = 25°C)
Pc
400
Watts
Mounting Torque, M4 Main Terminal
15
in-lb
Mounting Torque, M5 Mounting
31
in-lb
Weight
390
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
1
mA
Gate Leakage Voltage
IGES
VGE = VGES, VCE = 0V
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5.0mA, VCE = 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50A, VGE = 15V, Tj = 25°C
2.9
3.7
Volts
IC = 50A, VGE = 15V, Tj = 125°C
2.85
Volts
Total Gate Charge
QG
VCC = 600V, IC = 50A, VGE = 15V
187
nC
Emitter-Collector Voltage*
VEC
IE = 50A, VGE = 0V
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Cies
7.5
nf
Output Capacitance
Coes
VCE = 10V, VGE = 0V
2.6
nf
Reverse Transfer Capacitance
Cres
1.5
nf
Resistive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 50A,
80
ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
200
ns
Switch
Turn-off Delay Time
td(off)
RG = 6.3Ω, Resistive
150
ns
Times
Fall Time
tf
Load Switching Operation
350
ns
Diode Reverse Recovery Time
trr
IE = 50A, diE/dt = -100A/μs
300
ns
Diode Reverse Recovery Charge
Qrr
IE = 50A, diE/dt = -100A/μs
0.28
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/4 Module
0.31
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/4 Module
0.7
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
0.1
°C/W
2


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