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CM50MXA-24S Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CM50MXA-24S Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 15 page  CM50MXA-24S NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 50 Amperes/1200 Volts 2 03/13 Rev. 3 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2,*4 IC 50 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 100 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 425 Watts Emitter Current*2 IE*1 50 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 100 Amperes Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C Brake Part IGBT/ClampDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2,*4 IC 35 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 70 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 355 Watts Repetitive Peak Reverse Voltage (VGE = 0V) VRRM 1200 Volts Forward Current*2 IF*1 35 Amperes Forward Current (Pulse, Repetitive)*3 IFRM*1 70 Amperes Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 20.0 22.4 20.4 30.8 31.8 44.4 45.4 18.4 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di Th: NTC Thermistor 27.3 25.5 (Di/WN, Th) 34.6 41.2 44.2 Tr Br Di Br Di UN Di VN Di WN Tr UN Tr VN Tr WN Tr WP CR RN CR SN CR TN CR RP CR SP CR TP Di WP Di VP Tr VP Di UP Tr UP Th |
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