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PTH04T260WAZ Datasheet(PDF) 4 Page - Texas Instruments |
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PTH04T260WAZ Datasheet(HTML) 4 Page - Texas Instruments |
4 / 36 page ELECTRICAL CHARACTERISTICS PTH04T260W, PTH04T261W SLTS273E – SEPTEMBER 2006 – REVISED JULY 2009.................................................................................................................................................. www.ti.com PTH04T260W TA =25°C, VI = 5 V, VO = 3.3 V, CI = 330 µF, CO1 = 100 µF ceramic, CO2 = 150 µF non-ceramic, and IO = IO max (unless otherwise stated) PARAMETER TEST CONDITIONS PTH04T260W UNIT MIN TYP MAX IO Output current Over VO range 25°C, natural convection 0 3 A 0.69 ≤ VO ≤ 1.7 2.2 5.5 VI Input voltage range Over IO range V 1.7 < VO ≤ 3.6 VO+0.5 (1) 5.5 Output adjust range Over IO range 0.69 3.6 V Set-point voltage tolerance ±0.5 ±1 (2) %Vo Temperature variation –40°C < TA < 85°C ±0.3 %Vo VO Line regulaltion Over VI range ±2 mV Load regulation Over IO range ±2 mV Total output variation Includes set-point, line, load, –40°C ≤ TA ≤ 85°C ±1.5 (3) %VO RSET = 1.21 kΩ, VO = 3.3 V 95% RSET = 2.38 kΩ, VO = 2.5 V 93% RSET = 4.78 kΩ, VO = 1.8 V 91% η Efficiency IO = 3 A RSET = 7.09 kΩ, VO = 1.5 V 90% RSET = 12.1 kΩ, VO = 1.2 V 88% RSET = 20.8 kΩ, VO = 1.0 V 87% RSET = 689 kΩ, VO = 0.7 V 84% VO Ripple (peak-to-peak) 20-MHz bandwidth 1 %VO ILIM Overcurrent threshold Reset, followed by auto-recovery 6 A w/o TurboTrans Recovery Time 100 µSec CO1 = 100 µF, ceramic CO2 = 150 µF, VO Overshoot 50 mV non-ceramic 2.5 A/µs load step w/o TurboTrans (4) Recovery Time 120 µSec 50% to 100% IOmax Transient response CO1 = 100 µF ceramic VI = 3.3 V VO Overshoot 30 mV CO2 = 990 µF, Type B VO = 2.5 V with TurboTrans Recovery Time 180 µSec CO1 = 100 µF ceramic CO2 = 990 µF, Type B VO Overshoot 18 mV RTT = 1.54 kΩ IIL Track input current (pin 9) Pin to GND -130 (5) µA dVtrack/dt Track slew rate capability CO ≤ CO (max) 1 V/ms VI increasing, RUVLO = OPEN 1.95 2.19 Adjustable Under-voltage lockout UVLOADJ VI decreasing, RUVLO = OPEN 1.3 1.5 V (pin 10) Hysteresis, RUVLO ≤ 52.3 kΩ 0.5 Input high voltage (VIH) Open(6) V Inhibit control (pin 10) Input low voltage (VIL) -0.2 0.6 Input low current (IIL), Pin 10 to GND 125 µA Iin Input standby current Inhibit (pin 10) to GND, Track (pin 9) open 5 mA f s Switching frequency Over VI and IO ranges, SmartSync (pin 1) to GND 300 kHz fSYNC Synchronization (SYNC) frequency 240 400 kHz VSYNCH SYNC High-Level Input Voltage 2 5.5 V (1) The minimum input voltage is 2.2 V or (VO + 0.5) V, whichever is greater. (2) The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a tolerance of 1% with 100 ppm/C or better temperature stability. . (3) The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a tolerance of 1% with 200 ppm/C or better temperature stability. (4) Without TurboTrans, the minimum ESR limit of 7 m Ω must not be violated. (5) A low-leakage (<100 nA), open-drain device, such as MOSFET or voltage supervisor IC, is recommended to control pin 9. The open-circuit voltage is less than VI. (6) This control pin has an internal pull-up. Do not place an external pull-up on this pin. If it is left open-circuit, the module operates when input power is applied. A small, low-leakage (<100 nA) MOSFET is recommended for control. The open-circuit voltage is less than 3.5Vdc. For additional information, see the related application information section. 4 Submit Documentation Feedback Copyright © 2006–2009, Texas Instruments Incorporated Product Folder Link(s): PTH04T260W PTH04T261W |
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