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CM400E4G-130H Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor |
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CM400E4G-130H Datasheet(HTML) 7 Page - Mitsubishi Electric Semiconductor |
7 / 8 page MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE 3 th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 7 of 8 PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.01 0.1 1 10 100 10 100 1000 Collector Current [A] tf VCC = 3600V, VGE = ±15V RG(on) = 15Ω, RG(off) = 50Ω LS = 170nH, Tj = 125°C Inductive load tr td(on) td(off) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 10 Time [s] Rth(j-c)Q = 21.0K/kW Rth(j-c)R = 33.0K/kW FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.1 1 10 100 10 100 1000 Emitter Current [A] 10 100 1000 10000 trr Irr VCC = 3600V, VGE = ±15V RG(on) = 15Ω, LS = 170nH Tj = 125°C, Inductive load ⎪⎭ ⎪ ⎬ ⎫ ⎪⎩ ⎪ ⎨ ⎧ = − ∑ ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − = − exp 1 R Z i t n 1 i i ) c j ( th ) t ( τ 1234 Ri [K/kW] : 0.0096 0.1893 0.4044 0.3967 τi [sec] : 0.0001 0.0058 0.0602 0.3512 |
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