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CPH5517-TL-E Datasheet(PDF) 2 Page - ON Semiconductor

Part # CPH5517-TL-E
Description  Bipolar Transistor
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CPH5517-TL-E Datasheet(HTML) 2 Page - ON Semiconductor

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CPH5517
No.8987-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
μA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)100mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)300mA
420
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(9)6
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)500mA, IB=(--)10mA
(--280)
(--430)
mV
130
190
mV
IC=(--)300mA, IB=(--)6mA
(--145)
(--220)
mV
90
135
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)500mA, IB=(--)10mA
(--)0.81
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--50)60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)5
V
Turn-On Time
ton
See specified Test Circuit.
(36)38
ns
Storage Time
tstg
(173)332
ns
Fall Time
tf
(28)40
ns
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
CPH5517-TL-E
CPH5
3,000pcs./reel
Pb Free
+
+
50Ω
INPUT
OUTPUT
VR
RB
24Ω
VCC=25V
100μF
470μF
VBE= --5V
PW=20μs
IB1
IB2
DC≤1%
For PNP, the polarity is reversed.
20IB1= --20IB2= IC=500mA


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