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SGP6N60UFD Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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SGP6N60UFD Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 8 page SGP6N60UFD Rev. A1 ©2002 Fairchild Semiconductor Corporation 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse Rectangular Pulse Duration [sec] 1 10 100 1000 0.1 1 10 50 Safe Operating Area V GE=20V, TC=100 o C Collector-Emitter Voltage, V CE [V] 0.3 1 10 100 1000 0.01 0.1 1 10 50 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 50us 100us 1㎳ DC Operation Ic MAX. (Continuous) Ic MAX. (Pulsed) Collector-Emitter Voltage, VCE [V] 036 9 12 15 0 3 6 9 12 15 300 V 200 V V CC = 100 V Common Emitter R L = 100 Ω Tc = 25℃ Gate Charge, Q g [ nC ] 123456 5 10 100 200 Eoff Eon Eon Eoff Common Emitter V CC = 300V, VGE = ± 15V R G = 80Ω T C = 25℃ T C = 125 ℃ Collector Current, I C [A] Fig 14. Gate Charge Characteristics Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 13. Switching Loss vs. Collector Current Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + T C Fig 17. Transient Thermal Impedance of IGBT |
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