©2001 Fairchild Semiconductor Corporation

April 2001

SGS10N60RUFD Rev. A

IGBT

SGS10N60RUFD

Short Circuit Rated IGBT

General Description

Fairchild's

RUFD

series

of

Insulated

Gate

Bipolar

Transistors (IGBTs) provide low conduction and switching

losses as well as short circuit ruggedness. The RUFD

series is designed for applications such as motor control,

uninterrupted power supplies (UPS) and general inverters

where short circuit ruggedness is a required feature.

Features

• High speed switching

• High input impedance

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Description

SGS10N60RUFD

Units

Collector-Emitter Voltage

600

V

Gate-Emitter Voltage

± 20

V

Collector Current

A

Collector Current

A

Pulsed Collector Current

30

A

Diode Continuous Forward Current

A

Diode Maximum Forward Current

92

A

Short Circuit Withstand Time

µs

Maximum Power Dissipation

W

Maximum Power Dissipation

W

Operating Junction Temperature

-55 to +150

°C

Storage Temperature Range

-55 to +150

°C

Maximum Lead Temp. for soldering

purposes, 1/8” from case for 5 seconds

300

°C

Symbol

Parameter

Typ.

Max.

Units

Thermal Resistance, Junction-to-Case

--

2.3

°C/W

Thermal Resistance, Junction-to-Case

--

3.7

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

G

C

E

TO-220F

G C E