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SIHFR420T-E3 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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SIHFR420T-E3 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page 2 IRFR420, IRFU420, SiHFR420, SiHFU420 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 124 mH, RG = 25 Ω, IAS = 2.4 A (see fig. 12). c. ISD ≤ 2.4 A, dI/dt ≤ 50 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1” square PCB (FR-4 or G-10 material). Note a. When mounted on 1” square PCB (FR-4 or G-10 material). Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -50 Maximum Junction-to-Case (Drain) RthJC -3.0 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID =1.4 Ab -- 3.0 Ω Forward Transconductance gfs VDS = 50 V, ID = 1.4 A 1.5 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 360 - pF Output Capacitance Coss -92 - Reverse Transfer Capacitance Crss -37 - Total Gate Charge Qg VGS = 10 V ID = 2.1 A, VDS = 400 V, see fig. 6 and 13b -- 19 nC Gate-Source Charge Qgs -- 3.3 Gate-Drain Charge Qgd -- 13 Turn-On Delay Time td(on) VDD = 250 V, ID = 2.1 A, RG = 18 Ω, RD = 120 Ω, see fig. 10b -8.0 - ns Rise Time tr -8.6 - Turn-Off Delay Time td(off) -33 - Fall Time tf -16 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - D S G www.kersemi.com |
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