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SIHFZ24-E3 Datasheet(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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SIHFZ24-E3 Datasheet(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 7 page 2 IRFZ24, SiHFZ24 Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -2.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.061 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 10 Ab - - 0.10 Forward Transconductance gfs VDS = 25 V, ID = 10 A 5.5 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 640 - pF Output Capacitance Coss - 360 - Reverse Transfer Capacitance Crss -79 - Total Gate Charge Qg VGS = 10 V ID = 17 A, VDS = 48 V, see fig. 6 and 13b -- 25 nC Gate-Source Charge Qgs -- 5.8 Gate-Drain Charge Qgd -- 11 Turn-On Delay Time td(on) VDD = 30 V, ID = 17 A, Rg = 18 , RD = 1.7 , see fig. 10b -13 - ns Rise Time tr -58 - Turn-Off Delay Time td(off) -25 - Fall Time tf -42 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 17 A Pulsed Diode Forward Currenta ISM -- 68 Body Diode Voltage VSD TJ = 25 °C, IS = 17 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 17 A, dI/dt = 100 A/s - 88 180 ns Body Diode Reverse Recovery Charge Qrr - 0.29 0.64 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G www.kersemi.com |
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