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PSMN017-80BS Datasheet(PDF) 3 Page - NXP Semiconductors |
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PSMN017-80BS Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page PSMN017-80BS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 1 March 2012 3 of 14 NXP Semiconductors PSMN017-80BS N-channel 80 V 17 m Ω standard level MOSFET in D2PAK Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aad364 0 10 20 30 40 50 0 50 100 150 200 Tmb ( °C) ID (A) Tmb (°C) 0 200 150 50 100 03aa16 40 80 120 Pder (%) 0 003aad388 10 -1 1 10 10 2 10 3 1 10 10 2 10 3 VDS (V) ID (A) DC 100 ms 10 ms 1 ms 100 μs 10 μs Limit RDSon = VDS / ID |
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