SI3447 datasheet(1/5 Pages) FAIRCHILD

Part #	SI3447

Description	P-Channel 1.8V Specified PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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April 2001

2001 Fairchild Semiconductor Corporation

Si3447DV Rev A (W)

Si3447DV

P-Channel 1.8V Specified PowerTrench



 MOSFET

General Description

This

P-Channel

1.8V

specified

MOSFET

uses

Fairchild’s low voltage PowerTrench process. It has

been

optimized

for

battery

power

management

applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –5.5 A, –20 V. R

DS(ON) = 33 m

Ω @ V

GS = –4.5 V

RDS(ON) = 43 m

Ω @ V

GS = –2.5 V

RDS(ON) = 60 m

Ω @ V

GS = –1.8 V

• Fast switching speed.

• High performance trench technology for extremely

low RDS(ON)

D

S

D

G

SuperSOT -6

TM

6

5

4

1

2

3

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–20

V

VGSS

Gate-Source Voltage

±8

V

ID

Drain Current

– Continuous

(Note 1a)

–5.5

A

– Pulsed

–20

Maximum Power Dissipation

(Note 1a)

1.6

W

PD

(Note 1b)

0.8

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

78

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

30

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.447

Si3447DV

7’’

8mm

3000 units

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