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SI3454 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SI3454 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page October 2001 2001 Fairchild Semiconductor Corporation Si3454DV Rev A Si3454DV N-Channel PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 4.2 A, 30 V. RDS(ON) = 65 m Ω @ VGS = 10 V RDS(ON) = 95 m Ω @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (9.4 nC typical) • High power and current handling capability D D D S D G SuperSOT -6 TM 6 5 4 1 2 3 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 4.2 A – Pulsed 20 Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .454 Si3454DV 7’’ 8mm 3000 units |
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