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MC10XSD200FK Datasheet(PDF) 9 Page - Freescale Semiconductor, Inc |
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MC10XSD200FK Datasheet(HTML) 9 Page - Freescale Semiconductor, Inc |
9 / 60 page Analog Integrated Circuit Device Data Freescale Semiconductor 9 10XSD200 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1) ON-Resistance, Drain-to-Source (IHS = 3.0 A, TJ = 25 °C) CSNS_ratio = 0 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)25 – – – – – – 10 10 10 m ON-Resistance, Drain-to-Source (IHS = 3.0 A,TJ = 150 °C) CSNS_ratio = 0 VPWR = 8.0 V VPWR = 28 V VPWR = 36 V RDS(ON)150 – – – – – – 18 18 18 m ON-Resistance, Drain-to-Source difference from one channel to the other in parallel mode (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = X RDS(ON)150 -0.8 – +0.8 m ON-Resistance, Source-Drain (IHS = -3.0 A, TJ = 150 °C, VPWR = -24 V) RSD(ON)150 – – 18 m Max. detectable wiring length (2.5 mm²) for severe short-circuit detection High slew rate selected Medium slew rate selected: Low slew rate selected: LSHORT 20 50 100 85 160 280 140 300 600 cm Overcurrent Detection thresholds with CSNS_ratio bit = 0 (CSR0) OCH1_0 OCH2_0 OCM1_0 OCM2_0 OCL1_0 OCL2_0 OCL3_0 55 35 22 13 9.0 6.0 3.0 66 42 26 16 10.8 7.2 3.6 77 49 31 19.5 12.6 8.4 4.2 A Overcurrent Detection thresholds with CSNS_ratio bit = 1(CSR1) OCH1_1 OCH2_1 OCM1_1 OCM2_1 OCL1_1 OCL2_1 OCL3_1 18.3 11.7 7.2 4.4 3.0 2.0 0.96 22 14.0 8.7 5.3 3.6 2.4 1.2 26.5 16.3 10.1 6.2 4.2 2.8 1.44 A Output pin leakage Current in sleep state (positive value = outgoing) VHS,OFF = 0 V (VHS,OFF = output voltage in OFF state) VHS,OFF = VPWR, device in sleep state (VPWR = 24 V) IOUT_LEAK – -40.0 – – +11 +5.0 µA Switch Turn-on threshold for Supply overvoltage (VPWR -GND) VD_GND(CLAMP) 58 – 66 V Switch turn-on threshold for Drain-Source overvoltage (measured at IOUT = 500 mA VDS(CLAMP) 58 – 66 V Table 3. Static Electrical Characteristics (continued) Unless specified otherwise: 8.0 V VPWR 36 V, 3.0 V VDD 5.5 V, -40 C TA 125 C, GND = 0 V. Typical values are average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise. parameter Symbol Min Typ Max Unit |
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