BAT54S datasheet(3/7 Pages) NXP

Part #	BAT54S

Description	Schottky barrier (double) diodes

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Manufacturer	NXP [NXP Semiconductors]

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3 / 7 page

2002 Mar 04

3

NXP Semiconductors

Product data sheet

Schottky barrier (double) diodes

BAT54 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

THERMAL CHARACTERISTICS

Note

1.

Refer to SOT23 standard mounting conditions.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

VR

continuous reverse voltage

−

30

V

IF

continuous forward current

−

200

mA

IFRM

repetitive peak forward current

tp ≤ 1 s; δ ≤ 0.5

−

300

mA

IFSM

non-repetitive peak forward current

tp < 10 ms

−

600

mA

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

125

°C

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

−

230

mW

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

VF

forward voltage

see Fig.3

IF = 0.1 mA

240

mV

IF = 1 mA

320

mV

IF = 10 mA

400

mV

IF = 30 mA

500

mV

IF = 100 mA

800

mV

IR

reverse current

VR = 25 V; see Fig.4

2

μA

trr

reverse recovery time

when switched from IF = 10 mA

to IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA;

see Fig.6

5

ns

Cd

diode capacitance

f = 1 MHz; VR = 1 V; see Fig.5

10

pF

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