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BAV70M Datasheet(PDF) 7 Page - NXP Semiconductors

Part # BAV70M
Description  High-speed switching diodes
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAV70M Datasheet(HTML) 7 Page - NXP Semiconductors

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BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
7 of 15
NXP Semiconductors
BAV70 series
High-speed switching diodes
8.
Test information
(1) IR =1mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 5.
Reverse recovery time test circuit and waveforms
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ≤ 0.005
Fig 6.
Forward recovery voltage test circuit and waveforms
trr
(1)
+ IF
t
output signal
tr
tp
t
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50
IF
D.U.T.
Ri = 50
SAMPLING
OSCILLOSCOPE
mga881
tr
t
tp
10 %
90 %
I
input signal
RS = 50 Ω
I
Ri = 50 Ω
OSCILLOSCOPE
1 k
450
D.U.T.
mga882
VFR
t
output signal
V


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