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SI6415DQ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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SI6415DQ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  Si6415DQ Rev B(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –21 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –6.5 A VGS = –4.5 V, ID = –5.2 A VGS=–10 V, ID =–6.5A, TJ=125 °C 15 21 19 19 30 30 m Ω ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A gFS Forward Transconductance VDS = –10 V, ID = –6.5 A 24 S Dynamic Characteristics Ciss Input Capacitance 1604 pF Coss Output Capacitance 408 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 202 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 13 30 ns tr Turn–On Rise Time 13.5 30 ns td(off) Turn–Off Delay Time 42 110 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 25 60 ns Qg Total Gate Charge 17 70 nC Qgs Gate–Source Charge 5 nC Qgd Gate–Drain Charge VDS = –15 V, ID = –6.5 A, VGS = –10 V 6 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.1 A (Note 2) –0.7 –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 87 °C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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