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MCP6N11-010 Datasheet(PDF) 6 Page - Microchip Technology |
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MCP6N11-010 Datasheet(HTML) 6 Page - Microchip Technology |
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6 / 50 page  MCP6N11 DS25073A-page 6 © 2011 Microchip Technology Inc. TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA =25°C, VDD = 1.8V to 5.5V, VSS = GND, EN/CAL =VDD, VCM =VDD/2, VDM =0V, VREF =VDD/2, VL =VDD/2, RL =10kΩ to VL, CL = 60 pF and GDM =GMIN; see Figure 1-6 and Figure 1-7. Parameters Sym Min Typ Max Units GMIN Conditions AC Response Gain Bandwidth Product GBWP — 0.50 GMIN — MHz 1 to 10 — 35 — MHz 100 Phase Margin PM — 70 — ° all Open-Loop Output Impedance ROL —0.9 — k Ω 1 to 10 —0.6 — k Ω 100 Power Supply Rejection Ratio PSRR — 94 — dB all f < 10 kHz Common Mode Rejection Ratio CMRR — 104 — dB 1 to 10 f < 10 kHz — 94 — dB 100 f < 10 kHz Step Response Slew Rate SR — 3 — V/µs 1 to 10 VDD =1.8V —9 — V/µs VDD =5.5V — 2 — V/µs 100 VDD =1.8V —6 — V/µs VDD =5.5V Overdrive Recovery, Input Common Mode tIRC —10 — µs all VCM =VSS –1V (or VDD + 1V) to VDD/2, GDMVDM = ±0.1V, 90% of VOUT change Overdrive Recovery, Input Differential Mode tIRD —5 — µs VDM =VDML –(0.5V)/GMIN (or VDMH +(0.5V)/GMIN) to 0V, VREF =(VDD –GDMVDM)/2, 90% of VOUT change Overdrive Recovery, Output tOR —8 — µs GDM =2GMIN, GDMVDM =0.5VDD to 0V, VREF =0.75VDD (or 0.25VDD), 90% of VOUT change Noise Input Noise Voltage Eni — 570/GMIN —µVP-P 1 to 10 f = 0.1 Hz to 10 Hz —18 — µVP-P 100 Input Noise Voltage Density eni — 950/GMIN —nV/ √Hz 1 to 10 f = 100 kHz —35 — nV/ √Hz 100 Input Current Noise Density ini —1 — fA/ √Hz all f = 1 kHz |
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Similar Description - MCP6N11-010 |
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