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SI6933DQ Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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SI6933DQ Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page Si6933DQ Rev. B (W) Typical Characteristics 0 2 4 6 8 10 048 12 16 Qg, GATE CHARGE (nC) ID = -4.1A VDS = -10V -15V -20V 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 -V DS, DRAIN TO SOURCE VOLTAGE (V) CISS COSS CRSS f = 1 MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µs RDS(ON) LIMIT VGS = -10V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 125°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 125 oC/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0. D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
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