Si9424DY Rev.A

Si9424DY

General Description

This P-Channel 2.5V specified MOSFET is produced

using

Fairchild

Semiconductor's

advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain superior

switching performance.

These devices are well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

Applications

January 2001

Features

DS(on)

= 0.024

Ω @ V

GS

= -4.5 V

R

DS(on)

= 0.032

Ω @ V

GS

= -2.5 V.

low R

©2001 Fairchild Semiconductor International

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage

±10

V

Drain Current

- Continuous

(Note 1a)

-8.0

A

- Pulsed

-50

Power Dissipation for Single Operation

(Note 1a)

2.5

W

(Note 1b)

1.2

(Note 1c)

1

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

25

°C/W

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

9424

Si9424DY

13’’

12mm

2500 units

S

D

S

S

SO-8

D

D

D

G

5

6

8

3

1

7

4

2