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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Power Field Effect Transistor

N–Channel Enhancement–Mode Silicon Gate

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications such as power supplies, PWM motor

controls and other inductive loads, the avalanche energy capability

is specified to eliminate the guesswork in designs where inductive

loads are switched and offer additional safety margin against

unexpected voltage transients.

• 2500 V RMS Isolated Isotop Package

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• Very Low Internal Parasitic Inductance

• IDSS and VDS(on) Specified at Elevated Temperature

• U. L. Recognized, File #E69369

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

100

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

100

Vdc

Gate–Source Voltage — Continuous

VGS

VGSM

± 20

± 40

Vdc

Vpk

Drain Current — Continuous

°C

ID

ID

IDM

215

136

860

Adc

Total Power Dissipation

Derate above 25

°C

PD

460

3.70

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 40 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy

(VDD = 25 Vdc, VGS = 10 Vdc, IL = 215 Apk, L = 0.017 mH, RG = 25 Ω,)

EAS

400

mJ

RMS Isolation Voltage

VISO

2500

Vac

Thermal Resistance — Junction to Case

R

θJC

R

θJA

0.28

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

ISOTOP is a trademark of SGS–THOMSON Microelectronics.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Order this document

by MTE215N10E/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MTE215N10E

TMOS POWER FET

215 AMPERES

100 VOLTS

RDS(on) = 0.0055 OHM

Motorola Preferred Device

D

S

G

®

SOT–227B

1

2

3

4

1. Source

2. Gate

3. Drain

4. Source 2