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US5U3 Datasheet(PDF) 1 Page - Rohm

Part # US5U3
Description  2.5V Drive NchSBD MOSFET
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

US5U3 Datasheet(HTML) 1 Page - Rohm

  US5U3 Datasheet HTML 1Page - Rohm US5U3 Datasheet HTML 2Page - Rohm US5U3 Datasheet HTML 3Page - Rohm US5U3 Datasheet HTML 4Page - Rohm  
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US5U3
Transistors
Rev.B
1/3
2.5V Drive Nch+SBD MOSFET
US5U3
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET /
Schottky barrier diode
Features
1) Nch MOSFET and schottky barrier diode
are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
Applications
Switching
Package specifications
Inner circuit
Package
Code
Taping
Basic ordering unit (pieces)
US5U3
TR
3000
Type
Absolute maximum ratings (Ta=25
°C)
∗1
∗1
Parameter
V
VDSS
Symbol
V
VGSS
A
ID
A
IDP
A
IS
A
ISP
Limits
Unit
Drain-source voltage
<MOSFET>
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
30
12
±1.5
±6.0
0.6
6.0
∗2
PD
°C
Tch
Power dissipation
Channel temperature
150
W / ELEMENT
0.7
∗2
∗1
Parameter
V
VRM
Symbol
V
VR
A
IF
A
IFSM
Tj
Limits
Unit
Repetitive peak reverse voltage
<Di>
Reverse voltage
Forward current
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Forward current surge peak
Power dissipation
Junction temperature
25
20
0.7
3.0
W / ELEMENT
PD
0.5
150
°C
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
∗1 ESD protection diode
∗2 Body diode
∗2
∗1
(1)
(2)
(5)
(3)
(4)
TUMT5
Abbreviated symbol : U03
2.0
1.3


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