PMZB670UPE datasheet(6/15 Pages) NXP

Part #	PMZB670UPE

Description	20 V, single P-channel Trench MOSFET

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Manufacturer	NXP [NXP Semiconductors]

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PMZB670UPE

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Product data sheet

Rev. 3 — 23 March 2012

6 of 15

NXP Semiconductors

PMZB670UPE

20 V, single P-channel Trench MOSFET

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =-250µA; VGS =0V; Tj = 25 °C

-20

--V

VGSth

gate-source threshold

voltage

ID =-250µA; VDS =VGS; Tj = 25 °C

-0.5

-0.9

-1.3

V

IDSS

drain leakage current

VDS =-20 V; VGS =0V; Tj = 25 °C

---1

µA

VDS =-20 V; VGS =0V; Tj = 150 °C

-

-10

µA

IGSS

gate leakage current

VGS =8V; VDS =0V; Tj = 25 °C

---2

µA

VGS =-8 V; VDS =0V; Tj = 25 °C

---2

µA

VGS =4.5 V; VDS =0V; Tj = 25 °C

---0.5

µA

VGS =-4.5V; VDS =0V; Tj = 25 °C

---0.5

µA

RDSon

drain-source on-state

resistance

VGS =-4.5V; ID = -400 mA; Tj = 25 °C

-

0.67

0.85

Ω

VGS =-4.5V; ID = -400 mA; Tj = 150 °C

-

1.1

1.4

Ω

VGS =-2.5V; ID = -200 mA; Tj =25 °C

-

1.2

1.5

Ω

VGS =-1.8V; ID =-10 mA; Tj =25°C

-

1.8

2.8

Ω

gfs

forward

transconductance

VDS =-10 V; ID = -200 mA; Tj = 25 °C

-

610

-

mS

Dynamic characteristics

QG(tot)

total gate charge

VDS =-10 V; ID = -400 mA;

VGS =-4.5V; Tj =25°C

-

0.76

1.14

nC

QGS

gate-source charge

-

0.28

-

nC

QGD

gate-drain charge

-

0.18

-

nC

Ciss

input capacitance

VDS = -10 V; f = 1 MHz; VGS =0V;

Tj =25°C

-

5887pF

Coss

output capacitance

-

21

-

pF

Crss

reverse transfer

capacitance

-12

-pF

td(on)

turn-on delay time

VDS =-10 V; RL = 250 Ω; VGS =-4.5 V;

RG(ext) =6 Ω; Tj =25 °C

-

1836ns

tr

rise time

-

30

-

ns

td(off)

turn-off delay time

-

80

160

ns

tf

fall time

-

72

-

ns

Source-drain diode

VSD

source-drain voltage

IS = -300 mA; VGS =0V; Tj = 25 °C

-0.48

-0.84

-1.2

V

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