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PSMN7R0-100BS Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PSMN7R0-100BS
Description  N-channel 100V 6.8 m廓 standard level MOSFET in D2PAK.
Download  14 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PSMN7R0-100BS Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
Product profile
1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
[1]
Continuous current is limited by package.
PSMN7R0-100BS
N-channel 100V 6.8 m
Ω standard level MOSFET in D2PAK.
Rev. 2 — 2 March 2012
Objective data sheet
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
-
100
V
ID
drain current
Tmb =25°C; VGS =10V; see Figure 1
[1] -
-
100
A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-
-
269
W
Tj
junction temperature
-55
-
175
°C
Static characteristics
RDSon
drain-source on-state
resistance
VGS =10V; ID =15A; Tj = 100 °C; see Figure 12
--12
m
VGS =10V; ID =15A; Tj =25°C; see Figure 13
-5.4
6.8
m
Dynamic characteristics
QGD
gate-drain charge
VGS =10V; ID =25A; VDS =50V;
see Figure 15; see Figure 14
-36
-nC
QG(tot)
total gate charge
VGS =10V; ID =25A; VDS =50V;
see Figure 14; see Figure 15
-
125
-
nC
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =100 A;
Vsup = 100 V; unclamped; RGS =50 Ω
-
-
315
mJ


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