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SSU1N60B Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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SSU1N60B Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2001 Fairchild Semiconductor Corporation November 2001 Rev. B, November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • 0.9A, 600V, RDS(on) = 12Ω @VGS = 10 V • Low gate charge ( typical 5.9 nC) • Low Crss ( typical 3.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter SSR1N60B / SSU1N60B Units VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) 0.9 A - Continuous (TC = 100°C) 0.57 A IDM Drain Current - Pulsed (Note 1) 3.0 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 50 mJ IAR Avalanche Current (Note 1) 0.9 A EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 28 W - Derate above 25°C 0.22 W/°C TJ, Tstg Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 4.53 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ ● ● ● ● ● ● ● ● ● ● ● ● ▲ ▲ ▲ ▲ ! ! ! ! ! ! ! ! ! ! ! ! ◀ ◀ ◀ ◀ S D G I-PAK SSU Series D-PAK SSR Series GS D GS D |
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