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KBU804-G Datasheet(PDF) 1 Page - Comchip Technology |
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KBU804-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 3 page Silicon Bridge Rectifiers Page 1 REV: A KBU8005-G Thru. KBU810-G Parameter Symbol Unit Dimensions in inches and (millimeter) QW-BBR79 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Output Current @Tc=100°C Peak Forward Surge Current 8.3ms single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method) Operating Temperature Range Storage Temperature Range Reverse Voltage: 50 to 1000V Forward Current: 8.0A RoHS Device Maximum ratings and electrical characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% 50 35 50 VRRM VRMS VDC I(AV) IFSM VF IR TJ TSTG 8.0 200 1.0 10 -55 to +125 -55 to +150 V V V A A V μA °C KBU 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 Comchip Technology CO., LTD. Notes: Features -Surge overload rating - 200 amperes peak. Mechanical Data -Ideal for printed circuit board. 300 °C DC Blocking Voltage @TJ=100°C Maximum Reverse Leakage Current At Rate @TJ=25°C 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. KBU 8005-G KBU 801-G KBU 802-G KBU 804-G KBU 806-G KBU 808-G KBU 810-G -Mounting position: Any -Case: Molded plastic, KBU -Weight: 7.40grams 0.935(23.7) 0.895(22.7) 0.600(16.8) 0.700(17.8) 300 (7 .5) (25 .4) 1.00 MIN. .0 71 (1 .8) .08 7 (2.2) 0.220(5.6) 0.256(6.5) 0.276(7.0) 0.15ΦX23L HO LE TH RU 0.157(4.0)*45° 0.180(4.6) 0.048(1.2)TYP. 0.052(1.3)DIA. 0.780(19.8) 0.740(18.8) (3.8ΦX5.7L) -Plastic material has U/L flammability classification 94V-0 2. Company reserves the right to improve product design , functions and reliability without notice. 250 pF Typical Junction Capacitance Per Element (Note1) CJ Maximum Instantanous Forward Voltage Drop per Element at 4.0A |
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