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IXGR32N170AH1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGR32N170AH1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 2 page IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) min. typ. max. g fs I C = I C25; VCE = 10 V 25 33 S Note 2 C ies 3700 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 180 pF C res 44 pF Q g 155 nC Q ge I C = IC90, VGE = 15 V, VCE = 0.5 VCES 30 nC Q gc 51 nC t d(on) 46 ns t ri 57 ns t d(off) 270 500 ns t fi 50 100 ns E off 1.5 3.0 mJ t d(on) 48 ns t ri 42 ns E on 2.5 mJ t d(off) 300 ns t fi 70 ns E off 2.4 mJ R thJC 0.65 K/W R thCK 0.15 K/W Inductive load, T J = 125° °°°°C I C = IC90, VGE = 15 V R G = 2.7 Ω, VCE = 0.8 VCES Note 3 Inductive load, T J = 25° °°°°C I C = IC90, VGE = 15 V R G = 2.7 Ω, VCE = 0.8 VCES Note 3 IXGR 32N170AH1 Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 3. Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher TJ or increased R G. 4. See DH60-18A and IXGH32N170A datasheets for additional characteristics ISOPLUS247 Outline Reverse Diode (FRED) Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F I F = 20A, VGE = 0 V, Note 2 2.7 V I RM I F = 50A, VGE = 0 V, -diF/dt = 800 A/µs50 A t rr V R = 600 V 150 ns R thJC 1.5 K/W See IXGX32N170AH1 for charcteristic curves |
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