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TIP41C Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. TIP41C
Description  Medium Power Linear Switching Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Emitter Voltage: TIP41
: TIP41A
: TIP41B
: TIP41C
40
60
80
100
V
V
V
V
VCEO
Collector-Emitter Voltage: TIP41
: TIP41A
: TIP41B
: TIP41C
40
60
80
100
V
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
6
A
ICP
Collector Current (Pulse)
10
A
IB
Base Current
2
A
PC
Collector Dissipation (TC=25°C)
65
W
PC
Collector Dissipation (Ta=25°C)
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: TIP41
: TIP41A
: TIP41B
: TIP41C
IC = 30mA, IB = 0
40
60
80
100
V
V
V
V
ICEO
Collector Cut-off Current
: TIP41/41A
: TIP41B/41C
VCE = 30V, IB = 0
VCE = 60V, IB = 0
0.7
0.7
mA
mA
ICES
Collector Cut-off Current
: TIP41
: TIP41A
: TIP41B
: TIP41C
VCE = 40V, VEB = 0
VCE = 60V, VEB = 0
VCE = 80V, VEB = 0
VCE = 100V, VEB = 0
400
400
400
400
µA
µA
µA
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
1
mA
hFE
* DC Current Gain
VCE = 4V,IC = 0.3A
VCE = 4V, IC = 3A
30
15
75
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 6A, IB = 600mA
1.5
V
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = 4V, IC = 6A
2.0
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA
3.0
MHz
TIP41 Series(TIP41/41A/41B/41C)
Medium Power Linear Switching Applications
• Complement to TIP42/42A/42B/42C
1.Base
2.Collector
3.Emitter
1
TO-220




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