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SI1563DH-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI1563DH-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 14 page www.vishay.com 4 Document Number: 71963 S10-1054-Rev. B, 03-May-10 Vishay Siliconix Si1563DH N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.1 1 2 0 0.2 0.6 0.8 VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C 0.4 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 ID = 100 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1234 5 ID = 1.13 A VGS - Gate-to-Source Voltage (V) 0 1 5 Time (s) 3 4 1 600 10 0.1 0.01 2 100 Safe Operating Area, Junction-to-Ambient 10 1 0.1 1 10 100 0.01 TA = 25 °C Single Pulse 0.1 ID(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 * DS(on) Limited by R VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified IDM Limited P(t) = 10, DC |
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