DSI30-16AS

0.001

0.01

0.1

1

100

150

200

250

23

1

1

0

100

200

300

400

500

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0

10

20

30

40

50

60

010

20

30

0

10

20

30

40

50

0

50

100

150

200

1

10

100

1000

10000

0.0

0.2

0.4

0.6

0.8

1.0

0

50

100

150

200

0

10

20

30

40

I

F

[A]

V

I

FSM

[A]

t[s]

I

[A

t[ms]

P

tot

[W]

I

T

I

F(AV)M

[A]

T

Z

thJC

[K/W]

Fig. 1 Forward current versus

voltage drop per diode

Fig. 2 Surge overload current

Fig. 3 I

Fig. 4 Power dissipation vs. direct output current and ambient temperature

Fig. 5 Max. forward current vs.

case temperature

Fig. 6 Transient thermal impedance junction to case

t[ms]

Constants for Z

iR

t

10.03

0.0004

2 0.08

0.002

3 0.2

0.003

40.39

0.03

50.2

0.29

T

T

T

50 Hz, 80% V

RRM

T

T

V

T

150°C

R

0.6 K/W

0.8 K/W

1K/W

2K/W

4K/W

8K/W

DC =

1

0.5

0.4

0.33

0.17

0.08

DC =

1

0.5

0.4

0.33

0.17

0.08

Rectifier

IXYS reserves the right to change limits, conditions and dimensions.

20130107a

Data according to IEC 60747and per semiconductor unless otherwise specified

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