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TPS2412DG4 Datasheet(PDF) 6 Page - Texas Instruments |
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TPS2412DG4 Datasheet(HTML) 6 Page - Texas Instruments |
6 / 24 page DETAILED DESCRIPTION -470.02 R(RSET) V - 0.00314 (OFF) æ ö ç ÷ = ç ÷ è ø (1) TPS2412 TPS2413 SLVS728B – JANUARY 2007 – REVISED SEPTEMBER 2008.......................................................................................................................................... www.ti.com The following descriptions refer to the pinout and the functional block diagram. A, C: The A pin serves as the simulated diode anode and the C as the cathode. GATE is driven high when V(AC) exceeds 10 mV. Both devices provide a strong GATE pull-down when V(AC) is less than the programmable fast turn-off threshold. The TPS2412 has a soft pull-down when V(AC) is less than 10 mV but above the fast turn-off threshold. Several internal comparator and amplifier circuits monitor these two pins. The inputs are protected from excess differential voltage by a clamp diode and series resistance. If C falls below A by more than about 0.7 V, a small current flows out of C. Protect the internal circuits with an external clamp if C can be more than 6 V lower than A. The internal charge pump output, which provides bias power to the comparators and voltage to drive GATE, is referenced to A. Some charge pump current appears on A due to this topology. The A and C pins should be Kelvin connected to the MOSFET source and drain. A and C connections should also be short and low impedance, with special attention to the A connection. Residual noise from the charge pump can be reduced with a bypass capacitor at A if the application permits. BYP: BYP is the internal charge pump output, and the positive supply voltage for internal comparator circuits and GATE driver. A capacitor must be connected from BYP to A. While the capacitor value is not critical, a 2200-pF ceramic is recommended. Traces to this part must be kept short and low impedance to provide adequate filtering. Shorting this pin to a voltage below A damages the TPS2412/13. GATE: Gate controls the external N channel MOSFET gate. GATE is driven positive with respect to A by a driver operating from the voltage on BYP. A time-limited high current discharge source pulls GATE to GND when the fast turn-off comparator is activated. The high-current discharge is followed by a sustaining pull-down. The turn-off circuits are disabled by the thermal shutdown, leaving a resistive pull-down to keep the gate from floating. The gate connection should be kept low impedance to maximize turn-off current. GND: This is the input supply reference. GND should have a low impedance connection to the ground plane. It carries several Amperes of rapid-rising discharge current when the external MOSFET is turned off, and also carries significant charge pump currents. RSET: A resistor connected from this pin to GND sets the fast V(A-C) comparator turn-off threshold. The threshold is slightly positive when the RSET pin is left open. Current drawn by the resistor programs the turn-off voltage to increasing negative values. The TPS2413 must have a negative threshold programmed to avoid an unstable condition at light load. The expression for R(RSET) in terms of the trip voltage, V(OFF), follows. The units of the numerator are (V × V/A). V(OFF) is positive for V(A) greater than V), V(OFF) is less than 3 mV, and R(RSET) is in ohms. RSVD: Connect to ground. VDD: VDD is the primary supply for the gate drive charge pump and other internal circuits. This pin must be connected a source that is 3 V or greater when the external MOSFET is to be turned on. VDD may be greater or lower than the controlled bus voltage. A 0.01- µF bypass capacitor, or 10-Ω and a 0.01-µF filter, is recommended because charge pump currents are drawn through VDD. 6 Submit Documentation Feedback Copyright © 2007–2008, Texas Instruments Incorporated Product Folder Link(s): TPS2412 TPS2413 |
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