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MMPQ3467 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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MMPQ3467 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page PNP Switching Transistor (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS* V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 040V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, I E = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V IBEV Base-Cutoff Current VCE = 30 V, VBE = 3.0 V 120 nA ICEX Collector-Cutoff Current VCE = 30 V, VBE = 3.0 V 100 nA ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 °C 0.01 15 µA µA SWITCHING CHARACTERISTICS (except for MMPQ3467) *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% td Delay Time VCC = 30 V, VBE = 2.0 V, 10 ns tr Rise Time IC = 500 mA, IB1 = 50 mA 30 ns ts Storage Time VCC = 30 V, IC = 500 mA, 60 ns tf Fall Time IB1 = IB2 = 50 mA 30 ns hFE DC Current Gain IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 1.0 V IC = 1.0 A, VCE = 5.0 V 40 40 40 120 VCE(sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1.0 A, IB = 100 mA 0.3 0.5 1.0 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 1.0 A, IB = 100 mA 0.8 1.0 1.2 1.6 V V V fT Current Gain-Bandwidth Product IC = 50 mA, VCE = 10 V, f = 100 MHz 175 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 KHz 25 pF Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 KHz 100 pF |
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Similar Description - MMPQ3467 |
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