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2SK1544Q Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK1544Q
Description  DC?묭C Converter and Motor Drive Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1544Q Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK1544
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII.5)
2SK1544
DC−DC Converter and Motor Drive Applications
Low drain−source ON resistance
: RDS (ON) = 0.15 Ω (typ.)
High forward transfer admittance
: |Yfs| = 21 S (typ.)
Low leakage current
: IDSS = 300 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
500
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS
±30
V
DC
(Note 1)
ID
25
Drain current
Pulse (Note 1)
IDP
100
A
Drain power dissipation (Tc = 25°C)
PD
200
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
0.625
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)


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