MSE1PB, MSE1PD, MSE1PG, MSE1PJ

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Vishay General Semiconductor

Revision: 14-Aug-13

3

Document Number: 89067

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Instantaneous Forward Voltage (V)

10

1

0.1

0.01

0.4

0

0.8

1.2

1.6

2.0

2.4

T

T

T

T

T

T

T

100

10

1

0.1

0.001

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

0.01

T

T

T

T

T

T

Reverse Voltage (V)

10

1

0.1

1

10

100

t - Pulse Duration (s)

1000

1

0.01

1

10

1000

100

0.1

100

10

Junction to Ambient

0.106 (2.70)

0.091 (2.30)

0.055 (1.40)

0.047 (1.20)

Cathode Band

MicroSMP

0.030 (0.75)

0.022 (0.55)

0.030 (0.75)

0.022 (0.55)

0.059 (1.50)

0.043 (1.10)

0.039 (0.98)

0.031 (0.78)

0.091 (2.30)

0.083 (2.10)

0.020 (0.50)

0.043

(1.10)

0.011 (0.27)

0.005 (0.12)

0.079

(2.00)

0.032

(0.80)

0.032

(0.80)

Mounting Pad Layout

0.029 (0.73)

0.025 (0.63)