VO615A

www.vishay.com

Vishay Semiconductors

Rev. 2.2, 09-Sep-13

2

Document Number: 81753

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

Forward current

60

mA

Forward surge current

≤ 10 μs

1.5

A

LED power dissipation

at 25 °C

70

mW

OUTPUT

Collector emitter voltage

70

V

Emitter collector voltage

7V

Collector current

50

mA

Collector peak current

≤ 10 ms

100

mA

Output power dissipation

at 25 °C

70

mW

COUPLER

Isolation test voltage (RMS)

t = 1 s

5000

Operating ambient temperature range

- 55 to + 110

°C

Storage temperature range

- 55 to + 125

°C

2 mm from case,

≤ 10 s

260

°C

0

50

100

150

200

0

255075

100

125

150

18483

Phototransistor

Diode

T

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.43

1.6

V

Reverse current

100

μA

Junction capacitance

50

pF

OUTPUT

Collector emitter voltage

70

V

Emitter collector voltage

7V

Collector emitter cut-off current

10

100

nA

COUPLER

Collector emitter saturation voltage

0.3

V

Cut-off frequency

Ω

110

kHz

Coupling capacitance

f = 1 MHz

0.6

pF