MTP1N50E

6

Motorola TMOS Power MOSFET Transistor Device Data

SAFE OPERATING AREA

1.0E–05

1.0E–04

1.0E–02

0.1

1.0

0.01

1.0E–03

1.0E–01

1.0E+00

1.0E+01

0.2

0.05

0.01

SINGLE PULSE

0.02

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.1

1000

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

10

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.01

0

25

50

75

100

125

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

50

30

20

10

ID = 1 A

40

1.0

1.0

100

150

t,TIME (ms)

Figure 13. Thermal Response

R

θJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

10 ms

1 ms

dc

100

µs

10

µs

0.1

D = 0.5