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MTP1N50E Datasheet(PDF) 6 Page - Motorola, Inc |
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MTP1N50E Datasheet(HTML) 6 Page - Motorola, Inc |
6 / 8 page MTP1N50E 6 Motorola TMOS Power MOSFET Transistor Device Data SAFE OPERATING AREA 1.0E–05 1.0E–04 1.0E–02 0.1 1.0 0.01 1.0E–03 1.0E–01 1.0E+00 1.0E+01 0.2 0.05 0.01 SINGLE PULSE 0.02 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature 0.1 1000 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.1 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0 25 50 75 100 125 10 VGS = 20 V SINGLE PULSE TC = 25°C 50 30 20 10 ID = 1 A 40 1.0 1.0 100 150 t,TIME (ms) Figure 13. Thermal Response R θJC(t) = r(t) RθJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 Figure 14. Diode Reverse Recovery Waveform di/dt trr ta tp IS 0.25 IS TIME IS tb 10 ms 1 ms dc 100 µs 10 µs 0.1 D = 0.5 |
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