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TIC225S-S Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TIC225S-S Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 4 page TIC225 SERIES SILICON TRIACS 2 PRODU CT INFORMA TION JULY 1975 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. † All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz VGT Gate trigger voltage Vsupply = +12 V† Vsupply = +12 V† Vsupply = -12 V† Vsupply = -12 V† RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs 0.7 -0.7 -0.7 0.8 2 -2 -2 2 V VT On-state voltage IT = ±12 A IG = 50 mA (see Note 5) ±1.5 ±2.1 V IH Holding current Vsupply = +12 V† Vsupply = -12 V† IG = 0 IG = 0 Init’ IT = 100 mA Init’ IT = -100 mA 2.3 -1.6 20 -20 mA IL Latching current Vsupply = +12 V† Vsupply = -12 V† (see Note 6) 30 -30 mA dv/dt Critical rate of rise of off-state voltage VDRM = Rated VDRM IG = 0 TC = 110°C ±20 V/µs dv/dt(c) Critical rise of commutation voltage VDRM = Rated VDRM ITRM = ±12 A TC = 70°C (see Figure 6) ±1 ±4.5 V/µs thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 2.5 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W electrical characteristics at 25°C case temperature (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT |
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