TIC225 SERIES

SILICON TRIACS

2

PRODU CT

INFORMA TION

JULY 1975 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

† All voltages are with respect to Main Terminal 1.

the current carrying contacts are located within 3.2 mm from the device body.

6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:

Gate trigger

voltage

0.7

-0.7

-0.7

0.8

2

-2

-2

2

V

On-state voltage

(see Note 5)

±1.5

±2.1

V

Holding current

2.3

-1.6

20

-20

mA

Latching current

(see Note 6)

30

-30

mA

dv/dt

Critical rate of rise of

off-state voltage

±20

V/µs

Critical rise of

commutation voltage

(see Figure 6)

±1

±4.5

V/µs

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

Junction to case thermal resistance

2.5

°C/W

Junction to free air thermal resistance

62.5

°C/W

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT