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2SC2873Y Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SC2873Y Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page  2SC2873 2006-11-10 4 Collector-emitter voltage VCE (V) Safe Operating Area IC – VBE Base-emitter voltage VBE (V) Ambient temperature Ta (°C) 2.0 1.6 1.2 0.8 0.4 0 0 0.5 1.0 1.5 2.0 Common emitter VCE = 2 V Ta = 100°C −55 25 PC – Ta 0 0 0.8 0.2 0.4 0.6 20 40 60 80 100 120 140 160 1.2 1.0 (1) (2) (1) Mounted on a ceramic substrate (250 mm 2 × 0.8 t) (2) No heat sink 0.1 3 0.3 5 1 10 100 30 10 30 50 100 300 500 1000 3000 5000 DC operation Ta = 25°C IC max (pulse)* IC max (continuous) 10 ms* VCEO max 100 ms* 1 S* 1 ms* *: Single no repetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature Tested without a substrate |
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