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2SC3326 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SC3326 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC3326 2007-11-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 25 V, IC = 0 ⎯ ⎯ 0.1 μA DC current gain hFE (Note) VCE = 2 V, IC = 4 mA 200 ⎯ 1200 Collector-emitter saturation voltage VCE (sat) IC = 30 mA, IB = 3 mA ⎯ 0.042 0.1 V Base-emitter voltage VBE VCE = 2 V, IC = 4 mA ⎯ 0.61 ⎯ V Transition frequency fT VCE = 6 V, IC = 4 mA ⎯ 30 ⎯ MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 4.8 7 pF Turn-on time ton ⎯ 160 ⎯ Storage time tstg ⎯ 500 ⎯ Switching time Fall time tf Duty cycle < = 2% ⎯ 130 ⎯ ns Note: hFE classification A: 200~700, B: 350~1200 |
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