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BAV23S Datasheet(PDF) 6 Page - NXP Semiconductors |
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BAV23S Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BAV23_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 19 March 2010 6 of 13 NXP Semiconductors BAV23 series Dual high-voltage switching diodes 8. Test information f=1MHz; Tamb =25 C FR4 PCB, standard footprint (1) Single diode loaded. (2) Double diode loaded. Fig 4. Diode capacitance as a function of reverse voltage; typical values Fig 5. Forward current as a function of ambient temperature; derating curves mbg447 04 8 6 2 VR (V) 1.0 0.8 0.2 0.6 0.4 Cd (pF) Tamb (°C) 0 200 150 50 100 006aab214 100 200 300 IF (mA) 0 (2) (1) (1) IR =1mA Fig 6. Reverse recovery time test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 |
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