2SK2545

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2545

DC−DC Converter, Relay Drive and Motor Drive

Applications

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Characteristics

Symbol

Rating

Unit

Drain−source voltage

600

V

600

V

Gate−source voltage

±30

V

DC

(Note 1)

6

A

Drain current

Pulse (Note 1)

24

A

Drain power dissipation (Tc = 25°C)

40

W

Single pulse avalanche energy

(Note 2)

345

mJ

Avalanche current

6

A

Repetitive avalanche energy (Note 3)

4

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

3.125

°C / W

Thermal resistance, channel to ambient

62.5

°C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)