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HN1B01F Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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HN1B01F Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  HN1B01F 2007-11-01 2 Q2 Absolute Maximum Ratings (Ta = 25°C) Equivalent Circuit (Top View) Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector power dissipation PC* 300 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Q1 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cut-off current ICBO ― VCB = −50 V, IE = 0 ― ― −0.1 μA Emitter cut-off current IEBO ― VEB = −5 V, IC = 0 ― ― −0.1 μA DC current gain hFE (Note) ― VCE = −6 V, IC = −2 mA 120 ― 400 Collector-emitter saturation voltage VCE (sat) ― IC = −100 mA, IB = −10 mA ― −0.1 −0.3 V Transition frequency fT ― VCE = −10 V, IC = −1 mA ― 120 ― MHz Collector output capacitance Cob ― VCB = −10 V, IE = 0, f = 1 MHz ― 4 ― pF Q2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Circuit Test Condition Min Typ. Max Unit Collector cut-off current ICBO ― VCB = 60 V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO ― VEB = 5 V, IC = 0 ― ― 0.1 μA DC current gain hFE (Note) ― VCE = 6 V, IC = 2 mA 120 ― 400 Collector-emitter saturation voltage VCE (sat) ― IC = 100 mA, IB = 10 mA ― 0.1 0.25 V Transition frequency fT ― VCE = 10 V, IC = 1 mA ― 150 ― MHz Collector output capacitance Cob ― VCB = 10 V, IE = 0, f = 1 MHz ― 2 ― pF Note: hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking symbol Characteristic Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA |
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