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TC55VCM416BTGN Datasheet(PDF) 8 Page - Toshiba Semiconductor |
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TC55VCM416BTGN Datasheet(HTML) 8 Page - Toshiba Semiconductor |
8 / 18 page TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 2005-08-09 8/18 AC TEST CONDITIONS (Ta = −40 to 85°C, VDD = 2.3 to 3.6 V/1.65 to 2.2 V) TEST CONDITION PARAMETER TC55VCM416BTGN55 TC55VCM416BSGN55 TC55VEM416BXGN55 TC55YCM416BTGN70 TC55YCM416BSGN70 TC55YEM416BXGN70 High VDD × 0.7 + 0.2 V VDD − 0.2 V Input pulse level Low 0.2 V 0.2 V tR 1 V/ns 1 V/ns Input rise and fall time (Fig.1) tF 1 V/ns 1 V/ns Timing measurements VDD × 0.5 VDD × 0.5 Reference level VDD × 0.5 VDD × 0.5 VTM 2.3 V 1.65 V R1 810 Ω 470 Ω R2 1610 Ω 740 Ω Output load (Fig.2) CL 30 pF 30 pF Fig.1 : Input rise and fall time Fig.2 : Output load GND 90% tR 10% 90% 10% tF VDD Dout CL R2 VTM R1 |
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