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TC55YEM416BXGN70 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TC55YEM416BXGN70 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 18 page TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 2005-08-09 1/18 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.7 μA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B can be used in environments exhibiting extreme temperature conditions. The TC55VCM416BTGN/BSGN, TC55YCM416BTGN/BSGN is available in a plastic 48-pin thin-small-outline package (TSOP). The TC55VEM416BXGN, TC55YEM416BXGN is available in a plastic 48-ball BGA. FEATURES • Low-power dissipation Operating: 6 mW/MHz (typical) • Power down features using CE1 and CE2 • Wide operating temperature range of −40° to 85°C • Lead-Free Access time (MAX) Supply Current Part Number Operating Supply Voltage Package Supply Voltage 2.7~3.6 V Supply Voltage 2.3~3.6 V At Operating (MAX) At Standby (MAX) At Data Retention TC55VCM416BTGN55 48-pin Plastic TSOP(I) (12 ×20mm) (0.5mm pin pitch) (Normal bent) 55 ns 70 ns TC55VCM416BSGN55 48-pin Plastic TSOP(I) (12 ×14mm) (0.5mm pin pitch) (Normal bent) 55 ns 70 ns TC55VEM416BXGN55 2.3~3.6 V 48-ball BGA (8 ×11mm) (0.75mm ball pitch) 55 ns 70 ns 20 mA 15 μA 1.5~3.6 V Access time (MAX) Supply Current Part Number Operating Supply Voltage Package Supply Voltage 1.8~2.2 V Supply Voltage 1.65~2.2 V At Operating (MAX) At Standby (MAX) At Data Retention TC55YCM416BTGN70 48-pin Plastic TSOP(I) (12 ×20mm) (0.5mm pin pitch) (Normal bent) 70 ns 85 ns TC55YCM416BSGN70 48-pin Plastic TSOP(I) (12 ×14mm) (0.5mm pin pitch) (Normal bent) 70 ns 85 ns TC55YEM416BXGN70 1.65~2.2 V 48-ball BGA (8 ×11mm) (0.75mm ball pitch) 70 ns 85 ns 15 mA 15 μA 1.0~2.2 V Lead-Free |
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