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FGH15T120SMD Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FGH15T120SMD Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH15T120SMD Rev. C1 September 2013 Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Notes: 1. Vcc = 600 V,VGE = 15 V, IC = 60 A, RG =34 Ω, Inductive Load 2. Limited by Tjmax Symbol Description Ratings Unit VCES Collector to Emitter Voltage 1200 V VGES Gate to Emitter Voltage ±25 V Transient Gate to Emitter Voltage ±30 V IC Collector Current @ TC = 25 oC30 A Collector Current @ TC = 100 oC15 A ILM (1) Clamped Inductive Load Current @ TC = 25 oC 60 A ICM (2) Pulsed Collector Current 60 A IF Diode Continuous Forward Current @ TC = 25 oC 30 A Diode Continuous Forward Current @ TC = 100 oC 15 A IFM Diode Maximum Forward Current 100 A PD Maximum Power Dissipation @ TC = 25 oC333 W Maximum Power Dissipation @ TC = 100 oC167 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Symbol Parameter Typ. Max. Unit RθJC(IGBT) Thermal Resistance, Junction to Case -- 0.45 oC/W RθJC(Diode) Thermal Resistance, Junction to Case -- 2.0 oC/W RθJA Thermal Resistance, Junction to Ambient -- 40 oC/W G C E COLLECTOR (FLANGE) E C G FGH15T120SMD 1200 V, 15 A Field Stop Trench IGBT Features • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 15 A • 100% of The Parts Tested for ILM(1) • High Input Impedance •RoHS Compliant Applications • Solar Inverter, Welder, UPS & PFC Applications. General Description Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. |
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