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F475R06W1E3 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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F475R06W1E3 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page 2 TechnischeInformation/TechnicalInformation F4-75R06W1E3 IGBT-Module IGBT-modules preparedby:DK approvedby:MB dateofpublication:2013-10-03 revision:3.0 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 600 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 80°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 75 100 A A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 150 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175 Ptot 275 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V IC = 75 A, VGE = 15 V VCE sat 1,45 1,60 1,70 1,90 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,20 mA, VCE = VGE, Tvj = 25°C VGEth 4,9 5,8 6,5 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 0,80 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 0,0 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 4,60 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,145 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 600 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 75 A, VCE = 300 V VGE = ±15 V RGon = 5,1 Ω td on 0,025 0,025 0,025 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 75 A, VCE = 300 V VGE = ±15 V RGon = 5,1 Ω tr 0,017 0,019 0,02 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 75 A, VCE = 300 V VGE = ±15 V RGoff = 5,1 Ω td off 0,20 0,22 0,23 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 75 A, VCE = 300 V VGE = ±15 V RGoff = 5,1 Ω tf 0,07 0,09 0,10 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 75 A, VCE = 300 V, LS = 45 nH VGE = ±15 V, di/dt = 3600 A/µs (Tvj = 150°C) RGon = 5,1 Ω Eon 0,40 0,45 0,55 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 75 A, VCE = 300 V, LS = 45 nH VGE = ±15 V, du/dt = 4200 V/µs (Tvj = 150°C) RGoff = 5,1 Ω Eoff 1,75 2,20 2,30 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 530 380 A A Tvj = 25°C Tvj = 150°C tP ≤ 8 µs, tP ≤ 6 µs, Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC 0,50 0,55 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proIGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,60 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
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