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XRP6670EVB Datasheet(PDF) 2 Page - Exar Corporation |
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XRP6670EVB Datasheet(HTML) 2 Page - Exar Corporation |
2 / 13 page X XR RP P6 66 67 70 0 3 3A A 3 30 00 0k kH Hz z- -2 2..5 5M MH Hz z S Sy yn nc ch hr ro on no ou us s S Stte ep p D Do ow wn n R Re eg gu ulla atto or r © 2013 Exar Corporation 2/13 Rev. 1.0.1 ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. VDD, PVDD, FB, COMP, SHDN/RT ................... -0.3V to 6.0V SW ................................................... -0.3V to VDD+0.3V Junction Temperature Range...............................+150°C Storage Temperature .............................. -65°C to 150°C Power Dissipation ................................ Internally Limited Lead Temperature (Soldering, 10 sec) ................... 260°C ESD Rating (HBM - Human Body Model) .................... 2kV ESD Rating (MM - Machine Model) ...........................200V OPERATING RATINGS Input Voltage Range VIN...............................2.6V to 5.5V Maximum Output Current (Min.) .................................3A Junction Temperature Range ................. -40°C to +125°C Thermal Resistance ...................................................... DFN10 θJA ....................................................110°C/W DFN10 θJC ....................................................... 3°C/W Note 1: TJ is a function of the ambient temperature TA and power dissipation PD: (TJ = TA + (PD * θJA)) ELECTRICAL SPECIFICATIONS Specifications are for an Operating Junction Temperature of TA = TJ = 25°C only; limits applying over the full Operating Junction Temperature range are denoted by a “•”. Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise indicated, VDD = VPVDD = 3.3V, TA= TJ = 25°C. Parameter Min. Typ. Max. Units Conditions Supply Current 460 µA VFB=0.75V, No switching Shutdown Supply Current 1 µA SHDN/RT=VDD=VPVDD=5.5V Under Voltage Lockout (UVLO) Threshold 2.2 V VDD rising Under Voltage Lockout (UVLO) Hysteresis 300 mV Feedback Voltage VFB 0.784 0.800 0.816 V FB Pin Bias Current 0.1 0.4 µA Current Sense Transresistance 0.2 Ω Switching Leakage Current 1 µA SHDN/RT=VDD=5.5V Error Amplifier Voltage Gain 800 V/V Error Amplifier Trans- conductance 800 µA/V RT Pin Voltage 0.760 0.800 0.840 V Switching Frequency Range 0.3 2.5 MHz Programmed via ROSC 0.8 1 1.2 ROSC=330kΩ Maximum Duty Cycle 100 % VFB=0.75V Minimum On-Time 120 150 ns Switch Current Limit 3.2 4.2 A VFB=0.75V Switching FET On Resistance 0.11 0.16 Ω ISW=500mA Synchronous FET On Resistance 0.11 0.17 Ω ISW=500mA Shutdown Threshold VDD-0.7 VDD-0.4 V PGOOD Voltage Range -15 +15 % PGOOD Pull Down Resistance 120 Ω Output Current 3 A VDD= 2.6V to 5.5V, VOUT= 2.5V Output Voltage Line Regulation 0.4 %/V VDD= 2.7V to 5.5V, IOUT= 100mA Output Voltage Load Regulation ±0.2 % IOUT= 10mA to 3A Soft Start Time 1.5 ms IOUT= 10mA Thermal Shutdown Temperature 160 °C Thermal Shutdown Hysteresis 20 °C |
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