RTM002P02

Transistors

1/2

2.5V Drive Pch MOS FET

RTM002P02

Structure

External dimensions (Unit : mm)

Silicon P-channel MOS FET

Features

1) Low On-resistance.

2) Small package (VMT3).

3) 2.5V drive.

Applications

(1)Gate

(2)Source

ain

VMT3

Switching

Packaging specifications

Inner circuit

Package

Code

Taping

Basic ordering unit (pieces)

RTM002P02

T2L

8000

Type

Absolute maximum ratings (Ta=25

°C)

∗1

Parameter

V

Symbol

V

A

A

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

−20

±12

±0.2

±0.4

∗2

W

°C

Tch

°C

Tstg

Total power dissipation

Channel temperature

Range of storage temperature

150

−55 to +150

0.15

Thermal resistance

Parameter

°C/W

Rth(ch-a)

Symbol

Limits

Unit

Channel to ambient

833

∗ Each terminal mounted on a recommended land

∗

(1) Gate

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(3)

(1)

(2)

(3)Dr

(3)

0.32

0.8

1.2

0.13

0.5

0.22

0.4 0.4

(2)

(1)

Abbreviated symbol : TW