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AUIRLR3915TR Datasheet(PDF) 2 Page - International Rectifier |
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AUIRLR3915TR Datasheet(HTML) 2 Page - International Rectifier |
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2 / 13 page  AUIRLR3915 2 www.irf.com S D G S D G Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.45mH, RG = 25, IAS = 30A, VGS =10V. Part not recommended for use above this value. ISD 30A, di/dt 280A/μs, VDD V(BR)DSS, TJ 175°C. Pulse width 1.0ms; duty cycle 2%. Notes:
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25°C, L = 0.45mH, RG = 25, IAS = 30A, VGS =10V. When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90°C. Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12 14 ––– 14 17 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V gfs Forward Transconductance 42 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge ––– 61 92 Qgs Gate-to-Source Charge ––– 9.0 14 nC Qgd Gate-to-Drain ("Miller") Charge ––– 17 25 td(on) Turn-On Delay Time ––– 7.4 ––– tr Rise Time ––– 51 ––– td(off) Turn-Off Delay Time ––– 83 ––– ns tf Fall Time ––– 100 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 1870 ––– Coss Output Capacitance ––– 390 ––– pF Crss Reverse Transfer Capacitance ––– 74 ––– Coss Output Capacitance ––– 2380 ––– Coss Output Capacitance ––– 290 ––– Coss eff. Effective Output Capacitance g ––– 540 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 61 (Body Diode) A ISM Pulsed Source Current ––– ––– 240 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 62 93 ns Qrr Reverse Recovery Charge ––– 110 170 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) TJ = 25°C, IF = 30A, VDD = 25V di/dt = 100A/μs f TJ = 25°C, IS = 30A, VGS = 0V f showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 30A f MOSFET symbol VDD = 28V ID = 30A RG = 8.5 Conditions VGS = 10V f VGS = 0V ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 0V to 44V VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VDS = 25V, ID = 30Af ID = 30A VDS = 44V VGS = 16V VGS = -16V VGS = 10V f VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C m VDS = 25V VGS = 5.0V, ID = 26A f Conditions VDS = VGS, ID = 250μA |
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