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BZT52H-B8V2 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BZT52H-B8V2 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 3 — 7 December 2010 7 of 13 NXP Semiconductors BZT52H series Single Zener diodes in a SOD123F package (1) Tj =25 °C (prior to surge) (2) Tj = 150 °C (prior to surge) Tj =25 °C Fig 1. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 2. Forward current as a function of forward voltage; typical values BZT52H-B/C2V4 to BZT52H-B/C4V3 Tj =25 °C to 150 °C BZT52H-B/C4V7 to BZT52H-B/C12 Tj =25 °C to 150 °C Fig 3. Temperature coefficient as a function of working current; typical values Fig 4. Temperature coefficient as a function of working current; typical values mbg801 103 1 tp (ms) PZSM (W) 10 102 10−1 10 1 (1) (2) VF (V) 0.6 1 0.8 mbg781 100 200 300 IF (mA) 0 060 0 −2 −3 −1 mbg783 20 40 IZ (mA) SZ (mV/K) 4V3 3V9 3V6 3V0 2V4 2V7 3V3 020 16 10 0 −5 5 mbg782 48 12 IZ (mA) SZ (mV/K) 4V7 12 11 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 |
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